This resulted within a decreased do the job perform and also the development of the Schottky contact amongst the BrGO and n-style Si substrate. Due to the higher proportion of B-C and B-C3 bonding while in the BrGO/Si machine than that during the rGO/Si, the lessened Schottky barrier height on https://www.directivepublications.org/journal-of-applied-nanoscience/